? 1/6 table 1: main product characteristics i f(av) 6 a v rrm 1500 v t j 175c v f (typ) 1.1 v t rr (typ) 150 ns v fp (typ) 26 v DTV1500SD (crt tv horizontal deflection) high voltage damper diode table 3: absolute maximum ratings symbol parameter value unit v rrm repetitive peak reverse voltage 1500 v i f(rms) rms forward voltage 15 a i fsm surge non repetitive forward current tp = 10ms sinusoidal 50 a t stg storage temperature range -65 to 175 c t j maximum operating junction temperature 175 c k a to-220fpac DTV1500SDfp a k november 2004 rev. 2 features and benefits high breakdown voltage capability specified turn on switching characteristics very fast recovery diode low static and peak forward voltage drop for low dissipation insulated package (to-220fpac): insulating voltage = 2000v dc capacitance = 12 pf planar technology allowing high quality and best electrical characteristics description high voltage diode especially designed for horizontal deflection stage in standard and high resolution displays for tv?s. this device is packaged in to-220fpac (insulated package). table 2: order code part number marking DTV1500SDfp DTV1500SDfp
DTV1500SD 2/6 table 4: thermal resistance table 5: static electrical characteristics pulse test: * tp = 5 ms, < 2% ** tp = 380 s, < 2% to evaluate the conduction losses use the following equation: p = 1.23 x i f(av) + 0.045 i f 2 (rms) table 6: recovery characteristics table 7: turn-on switching characteristics symbol parameter value (max). unit r th(j-c) junction to case thermal resistance 5.48 c/w symbol parameter test conditions typ max. unit i r * reverse leakage current t j = 25c v r = v rrm 100 a t j = 125c 100 1000 v f ** forward voltage drop t j = 25c i f = 6a 1.2 1.75 v t j = 125c 1.1 1.5 symbol parameter test conditions typ max. unit t rr reverse recovery time t j = 25c i f = 1a di f /dt = -50 a/s v r =30v 150 250 ns i f = 100ma irr = 10ma i r =100ma 1000 symbol parameter test conditions typ max. unit t fr forward recovery time t j = 100c i f = 6a di f /dt = 80 a/s v fr = 3v 500 ns v fp peak forward voltage t j = 100c i f = 6a di f /dt = 80 a/s 26 36 v
DTV1500SD 3/6 figure 1: conduction losses versus average current ( =0.45) figure 2: forward voltage drop versus forward current figure 3: reverse recovery charges versus di f /dt (typical values) figure 4: peak reverse recovery current versus di f /dt (typical values) figure 5: transient peak forward voltage versus di f /dt (typical values) figure 6: forward recovery time versus di f /dt (typical values) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 i(a) p p(w) f(av) 0.1 1.0 10.0 100.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i (a) fm v (v) fm t =125c (typical values) j t =25c (maximum values) j t =125c (maximum values) j 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1.0 10.0 q (c) rr di /dt(a/s) f i =6a t =125c f j 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.1 1.0 10.0 i (a) rm di /dt(a/s) f i =6a t =125c f j 0 5 10 15 20 25 30 35 40 45 50 0 20 40 60 80 100 120 140 160 180 200 v (v) fp di /dt(a/s) f i =6a t =100c f j 0 50 100 150 200 250 300 350 400 450 500 550 0 20 40 60 80 100 120 140 160 180 200 t (ns) fr di /dt(a/s) f i =6a t =100c f j v =3.0v fr
DTV1500SD 4/6 figure 7: relative variations of dynamic parameters versus junction temperature figure 8: junction capacitance versus reverse voltage applied (typical values) figure 9: relative variation of thermal impedance junction case versus pulse duration 0.00 0.25 0.50 0.75 1.00 1.25 25 50 75 100 125 i rm q rr v fp t (c) j 1 10 100 1 10 100 1000 c(pf) v (v) r f=1mhz v =30mv t =25c osc rms j 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 z/r th(j-c) th(j-c) single pulse t (s) p
DTV1500SD 5/6 figure 10: to-220fpac package mechanical data h l3 l2 l4 l6 g g1 f f1 d e l7 a b dia l5 table 8: ordering information part number marking package weight base qty delivery mode DTV1500SDfp DTV1500SDfp to-220fpac 1.8 g 50 tube table 9: revision history date revision description of changes 05-jul-2004 1 first issue. 25-nov-2004 2 table 3 page 1: t stg and t j from upgraded from 150c to 175c. ref. dimensions millimeters inches min. max. min. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.70 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.70 0.045 0.067 f2 1.15 1.70 0.045 0.067 g 4.95 5.20 0.195 0.204 g1 2.40 2.70 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 typ. 0.63 typ. l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9.00 9.30 0.354 0.366 dia. 3 3.20 0.118 0.126
DTV1500SD 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assu mes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replac es all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered tr ademark of stmicroelectronics. all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
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